Product Model

RJP30H2ADPE-00-J3

Introduction

Silicon N Channel IGBT High Speed Power Switching

Brand and Manufacturer

Renesas Technology Corp

Features

High-speed switching

Low drive power

Low voltage drop

High reliability due to robust monolithic structure

Product Performance

High current handling capability

Fast switching times

Minimal gate charge and capacitance

Low on-state resistance

Technical Specifications

Transistor Type: IGBT

Voltage - Rated: 360V

Current - Collector (Ic) (Max): 35A

Power - Max: 100W

Switching Energy: 170µJ (off), 340µJ (on)

Dimensions, Shape, and Packaging

TO-263 (DPAK) package

Surface mount

Package size: 10.4 mm x 9.65 mm x 4.5 mm

Quality and Reliability

Proven reliability in industrial applications

Comprehensive testing during manufacturing

High thermal performance

Product Advantages

Efficient power conversion

Low power loss and energy saving

Suitable for high-frequency operations

Product Competitiveness

Optimized for high-volume manufacturing

Widely recognized and accepted in the market

Meets industry standards for IGBTs

Compatibility

Compatible with standard surface mount processes

Can be driven by standard IGBT drivers

Standard Certification and Compliance

Complies with industry specifications for silicon IGBTs

RoHS compliant

Lifespan and Sustainability

Long lifespan when operated within rated specifications

Can be used in energy-efficient designs

Actual Application Fields

Inverter for motor drive

AC/DC power supply

Switching power supply

General-purpose inverters

Induction heating

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